Light-emitting element having PNPN-structure and...

Details Light-emitting element having PNPN-structure and... Light-emitting element having PNPN-structure and...

2009-02-27

2010-11-16

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

C257S088000, C257S092000, C257S099000, C257S115000, C257SE27079

Reexamination Certificate

active

07834363

ABSTRACT:
A light-emitting element including a light-emitting thyristor and a Schottky barrier diode is provided. A Schottky barrier diode is formed by contacting a metal terminal to a gate layer of a three-terminal light-emitting thyristor consisting of a PNPN-structure. A self-scanning light-emitting element array may be driven at 3.0V by using such a Schottky barrier diode as a coupling diode of a diode-coupled self-scanning light-emitting element array.

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