Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2006-03-16
2010-12-28
Toledo, Fernando L (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257S302000, C257SE27096, C257SE29186, C257SE29262, C257SE29274, C257SE21375, C257SE21410, C257SE21447, C257SE21629, C257SE21643, C438S294000, C438S295000, C438S296000, C438S390000, C438S391000, C438S392000, C438S246000, C438S444000, C438S427000
Reexamination Certificate
active
07859026
ABSTRACT:
A semiconductor device and methods for its fabrication are provided. The semiconductor device comprises a trench formed in the semiconductor substrate and bounded by a trench wall extending from the semiconductor surface to a trench bottom. A drain region and a source region, spaced apart along the length of the trench, are formed along the trench wall, each extending from the surface toward the bottom. A channel region is formed in the substrate along the trench wall between the drain region and the source region and extending along the length of the trench parallel to the substrate surface. A gate insulator and a gate electrode are formed overlying the channel.
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Singal Ankush K
Spansion LLC
Toledo Fernando L
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