Semiconductor layer structure and method of making the same

Details Semiconductor layer structure and method of making the same Semiconductor layer structure and method of making the same

2008-06-30

2010-12-07

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S138000, C438S152000, C438S458000, C438S488000, C257SE21088, C257SE21122, C257SE21123, C257SE21214, C257SE21388

Reexamination Certificate

active

07846814

ABSTRACT:
A method of forming a semiconductor structure includes providing a substrate and providing a detach region which is carried by the substrate. A device structure which includes a stack of crystalline semiconductor layers is provided, wherein the detach region is positioned between the device structure and substrate. The stack is processed to form a vertically oriented semiconductor device.

REFERENCES:
patent: 6222251 (2001-04-01), Holloway
patent: 7217636 (2007-05-01), Atanackovic
patent: 2003/0113963 (2003-06-01), Wurzer
patent: 2004/0080002 (2004-04-01), Agarwal et al.

Affiliated with

Also associated with

Rating

Semiconductor layer structure and method of making the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor layer structure and method of making the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor layer structure and method of making the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4165073