Semiconductor device manufacturing: process – Semiconductor substrate dicing – With attachment to temporary support or carrier
Reexamination Certificate
2007-08-07
2010-11-09
Fahmy, Wael M (Department: 2891)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
With attachment to temporary support or carrier
C438S033000, C438S068000, C438S113000, C438S114000, C438S458000, C438S460000, C438S461000, C438S462000, C438S463000, C438S465000, C257SE21214, C257SE21237
Reexamination Certificate
active
07829440
ABSTRACT:
A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, a seed metal layer may be used to grow hard metal layers above it for handling. Metal may be plated above these metal layers everywhere except where a block of stop electroplating (EP) material exists. The stop EP material may be obliterated, and a barrier layer may be formed above the entire remaining structure. The substrate may be removed, and the individual dies may have any desired bonding pads and/or patterned circuitry added to the semiconductor surface. The remerged hard metal after laser cutting and heating should be strong enough for handling. Tape may be added to the wafer, and a breaker may be used to break the dies apart. The resulting structure may be flipped over, and the tape may be expanded to separate the individual dies.
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PCT International Search Report and Written Opinion dated Mar. 3, 2008.
Cheng Chao-Chen
Chu Chen-Fu
Chu Jiunn-Yi
Doan Trung Tri
Fahmy Wael M
Patterson & Sheridan L.L.P.
SemiLEDS Optoelectronics Co. Ltd.
Yang Minchul
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