Resistance change memory device

Details Resistance change memory device Resistance change memory device

2007-06-12

2010-02-16

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S005000, C257SE31029, C365S145000

Reexamination Certificate

active

07663132

ABSTRACT:
A resistance change memory device including a substrate, first and second wiring lines formed above the substrate to be insulated from each other and memory cells disposed between the first and second wiring lines, wherein the memory cell includes: a variable resistance element for storing as information a resistance value; and a Schottky diode connected in series to the variable resistance element. The variable resistance element has a recording layer formed of a first composite compound expressed by AxMyOz(where “A” and “M” are cation elements different from each other; “O” oxygen; and 0.5≦x≦1.5, 0.5≦y≦2.5 and 1.5≦z≦4.5) and a second composite compound containing at least one transition element and a cavity site for housing a cation ion.

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