Phase change memory cell and method of formation

Details Phase change memory cell and method of formation Phase change memory cell and method of formation

2007-12-21

2010-02-16

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257SE29080, C438S095000, C365S163000

Reexamination Certificate

active

07663137

ABSTRACT:
A phase change memory element and methods for forming the same are provided. The memory element includes a first electrode and a chalcogenide comprising phase change material layer over the first electrode. A metal-chalcogenide layer is over the phase change material layer. The metal chalcogenide layer is tin-telluride. A second electrode is over the metal-chalcogenide layer. The memory element is configured to have reduced current requirements.

REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 3622319 (1971-11-01), Sharp
patent: 3743847 (1973-07-01), Boland
patent: 3961314 (1976-06-01), Klose et al.
patent: 3966317 (1976-06-01), Wacks et al.
patent: 3983542 (1976-09-01), Ovshinsky
patent: 3988720 (1976-10-01), Ovshinsky
patent: 4177474 (1979-12-01), Ovshinsky
patent: 4267261 (1981-05-01), Hallman et al.
patent: 4269935 (1981-05-01), Masters et al.
patent: 4312938 (1982-01-01), Drexler et al.
patent: 4316946 (1982-02-01), Masters et al.
patent: 4320191 (1982-03-01), Yoshikawa et al.
patent: 4405710 (1983-09-01), Balasubramanyam et al.
patent: 4419421 (1983-12-01), Wichelhaus et al.
patent: 4499557 (1985-02-01), Holmberg et al.
patent: 4597162 (1986-07-01), Johnson et al.
patent: 4608296 (1986-08-01), Keem et al.
patent: 4637895 (1987-01-01), Ovshinsky et al.
patent: 4646266 (1987-02-01), Ovshinsky et al.
patent: 4664939 (1987-05-01), Ovshinsky
patent: 4668968 (1987-05-01), Ovshinsky et al.
patent: 4670763 (1987-06-01), Ovshinsky et al.
patent: 4671618 (1987-06-01), Wu et al.
patent: 4673957 (1987-06-01), Ovshinsky et al.
patent: 4678679 (1987-07-01), Ovshinsky
patent: 4696758 (1987-09-01), Ovshinsky et al.
patent: 4698234 (1987-10-01), Ovshinsky et al.
patent: 4710899 (1987-12-01), Young et al.
patent: 4728406 (1988-03-01), Banerjee et al.
patent: 4737379 (1988-04-01), Hudgens et al.
patent: 4766471 (1988-08-01), Ovshinsky et al.
patent: 4769338 (1988-09-01), Ovshinsky et al.
patent: 4775425 (1988-10-01), Guha et al.
patent: 4788594 (1988-11-01), Ovshinsky et al.
patent: 4795657 (1989-01-01), Formigoni et al.
patent: 4800526 (1989-01-01), Lewis
patent: 4809044 (1989-02-01), Pryor et al.
patent: 4818717 (1989-04-01), Johnson et al.
patent: 4843443 (1989-06-01), Ovshinsky et al.
patent: 4845533 (1989-07-01), Pryor et al.
patent: 4847674 (1989-07-01), Sliwa et al.
patent: 4853785 (1989-08-01), Ovshinsky et al.
patent: 4891330 (1990-01-01), Guha et al.
patent: 5128099 (1992-07-01), Strand et al.
patent: 5159661 (1992-10-01), Ovshinsky et al.
patent: 5166758 (1992-11-01), Ovshinsky et al.
patent: 5177567 (1993-01-01), Klersy et al.
patent: 5219788 (1993-06-01), Abernathey et al.
patent: 5238862 (1993-08-01), Blalock et al.
patent: 5272359 (1993-12-01), Nagasubramanian et al.
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 5314772 (1994-05-01), Kozicki
patent: 5315131 (1994-05-01), Kishimoto et al.
patent: 5335219 (1994-08-01), Ovshinsky et al.
patent: 5341328 (1994-08-01), Ovshinsky et al.
patent: 5350484 (1994-09-01), Gardner et al.
patent: 5359205 (1994-10-01), Ovshinsky
patent: 5360981 (1994-11-01), Owen et al.
patent: 5363329 (1994-11-01), Troyan
patent: 5406509 (1995-04-01), Ovshinsky et al.
patent: 5414271 (1995-05-01), Ovshinsky et al.
patent: 5500532 (1996-03-01), Kozicki et al.
patent: 5512328 (1996-04-01), Yoshimura et al.
patent: 5512773 (1996-04-01), Wolf et al.
patent: 5534711 (1996-07-01), Ovshinsky et al.
patent: 5534712 (1996-07-01), Ovshinsky et al.
patent: 5536947 (1996-07-01), Klersy et al.
patent: 5543737 (1996-08-01), Ovshinsky
patent: 5591501 (1997-01-01), Ovshinsky et al.
patent: 5596522 (1997-01-01), Ovshinsky et al.
patent: 5687112 (1997-11-01), Ovshinsky
patent: 5694054 (1997-12-01), Ovshinsky et al.
patent: 5714768 (1998-02-01), Ovshinsky et al.
patent: 5726083 (1998-03-01), Takaishi
patent: 5751012 (1998-05-01), Wolstenholme et al.
patent: 5761115 (1998-06-01), Kozicki et al.
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5814527 (1998-09-01), Wolstenholme et al.
patent: 5818749 (1998-10-01), Harshfield
patent: 5825046 (1998-10-01), Czubatyj et al.
patent: 5841150 (1998-11-01), Gonzalez et al.
patent: 5846889 (1998-12-01), Harbison et al.
patent: 5851882 (1998-12-01), Harshfield
patent: 5869843 (1999-02-01), Harshfield
patent: 5896312 (1999-04-01), Kozicki et al.
patent: 5912839 (1999-06-01), Ovshinsky et al.
patent: 5914893 (1999-06-01), Kozicki et al.
patent: 5920788 (1999-07-01), Reinberg
patent: 5933365 (1999-08-01), Klersy et al.
patent: 5998066 (1999-12-01), Block et al.
patent: 6011757 (2000-01-01), Ovshinsky
patent: 6031287 (2000-02-01), Harshfield
patent: 6072716 (2000-06-01), Jacobson et al.
patent: 6077729 (2000-06-01), Harshfield
patent: 6084796 (2000-07-01), Kozicki et al.
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6117720 (2000-09-01), Harshfield
patent: 6141241 (2000-10-01), Ovshinsky et al.
patent: 6143604 (2000-11-01), Chiang et al.
patent: 6177338 (2001-01-01), Liaw et al.
patent: 6236059 (2001-05-01), Wolsteinholme et al.
patent: RE37259 (2001-07-01), Ovshinsky
patent: 6297170 (2001-10-01), Gabriel et al.
patent: 6300684 (2001-10-01), Gonzalez et al.
patent: 6316784 (2001-11-01), Zahorik et al.
patent: 6329606 (2001-12-01), Freyman et al.
patent: 6339544 (2002-01-01), Chiang et al.
patent: 6348365 (2002-02-01), Moore et al.
patent: 6350679 (2002-02-01), McDaniel et al.
patent: 6376284 (2002-04-01), Gonzalez et al.
patent: 6388324 (2002-05-01), Kozicki et al.
patent: 6391688 (2002-05-01), Gonzalez et al.
patent: 6404665 (2002-06-01), Lowrey et al.
patent: 6414376 (2002-07-01), Thakur et al.
patent: 6418049 (2002-07-01), Kozicki et al.
patent: 6420725 (2002-07-01), Harshfield
patent: 6423628 (2002-07-01), Li et al.
patent: 6429064 (2002-08-01), Wicker
patent: 6437383 (2002-08-01), Xu
patent: 6440837 (2002-08-01), Harshfield
patent: 6462984 (2002-10-01), Xu et al.
patent: 6469364 (2002-10-01), Kozicki
patent: 6473332 (2002-10-01), Ignatiev et al.
patent: 6480438 (2002-11-01), Park
patent: 6487106 (2002-11-01), Kozicki
patent: 6487113 (2002-11-01), Park et al.
patent: 6501111 (2002-12-01), Lowrey
patent: 6507061 (2003-01-01), Hudgens et al.
patent: 6511862 (2003-01-01), Hudgens et al.
patent: 6511867 (2003-01-01), Lowrey et al.
patent: 6512241 (2003-01-01), Lai
patent: 6514805 (2003-02-01), Xu et al.
patent: 6531373 (2003-03-01), Gill et al.
patent: 6534781 (2003-03-01), Dennison
patent: 6545287 (2003-04-01), Chiang
patent: 6545907 (2003-04-01), Lowrey et al.
patent: 6555860 (2003-04-01), Lowrey et al.
patent: 6563164 (2003-05-01), Lowrey et al.
patent: 6566700 (2003-05-01), Xu
patent: 6567293 (2003-05-01), Lowrey et al.
patent: 6569705 (2003-05-01), Chiang et al.
patent: 6570784 (2003-05-01), Lowrey
patent: 6576921 (2003-06-01), Lowrey
patent: 6586761 (2003-07-01), Lowrey
patent: 6589714 (2003-07-01), Maimon et al.
patent: 6590807 (2003-07-01), Lowrey
patent: 6593176 (2003-07-01), Dennison
patent: 6597009 (2003-07-01), Wicker
patent: 6605527 (2003-08-01), Dennison et al.
patent: 6613604 (2003-09-01), Maimon et al.
patent: 6621095 (2003-09-01), Chiang et al.
patent: 6625054 (2003-09-01), Lowrey et al.
patent: 6642102 (2003-11-01), Xu
patent: 6646297 (2003-11-01), Dennison
patent: 6649928 (2003-11-01), Dennison
patent: 6667900 (2003-12-01), Lowrey et al.
patent: 6671710 (2003-12-01), Ovshinsky et al.
patent: 6673648 (2004-01-01), Lowrey
patent: 6673700 (2004-01-01), Dennison et al.
patent: 6674115 (2004-01-01), Hudgens et al.
patent: 6687153 (2004-02-01), Lowrey
patent: 6687427 (2004-02-01), Ramalingam et al.
patent: 6690026 (2004-02-01), Peterson
patent: 6696355 (2004-02-01), Dennison
patent: 6707712 (2004-03-01), Lowery
patent: 6714954 (2004-03-01), Ovshinsky et al.
patent: 7061013 (2006-06-01), Hideki
patent: 2002/0000666 (2002-01-01), Kozicki et al.
patent: 2002/0072188 (2002-06-01), Gilton
patent: 2002/0106849 (2002-08-01), Moore
patent: 2002/0123169 (2002-09-01), Moore et al.
patent: 2002/0123170 (2002-09-01), Moore et al.
patent: 2002/0123248 (2002-09-01), Moore et al.
patent: 2002/0127886 (2002-09-01), Moore et al.
patent: 2002/0132417 (2002-09-01), Li
patent: 2002/0160551 (2002-10-01), Harshfield

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