Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2007-09-28
2010-06-08
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257S231000, C257SE29246
Reexamination Certificate
active
07732840
ABSTRACT:
A second-conductivity-type transistor includes a source and drain formed by a second-conductivity-type diffusion layer formed on a first-conductivity-type semiconductor layer; and a gate formed on the first-conductivity-type semiconductor layer sandwiched between the second-conductivity-type diffusion layer through an insulating film A first-conductivity-type transistor includes a source and drain formed by a first-conductivity-type diffusion layer formed on a second-conductivity-type semiconductor layer; and a gate formed on the second-conductivity-type semiconductor layer sandwiched between the first-conductivity-type diffusion layer through an insulating film. The second-conductivity-type diffusion layer for configuring the second-conductivity-type transistor is divided into a plurality of regions, each of which being separated by a device isolation region formed on the first-conductivity-type semiconductor layer. The first-conductivity-type diffusion layer for configuring the first-conductivity-type transistor is divided into a plurality of regions, each of which being separated by a device isolation region formed on the second-conductivity-type semiconductor layer.
REFERENCES:
patent: 2005/0001237 (2005-01-01), Hayakawa et al.
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patent: 2005/0082613 (2005-04-01), Taguchi
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Fukuda Ryo
Matsuoka Fumiyoshi
Watanabe Yohji
Jackson, Jr. Jerome
Kabushiki Kaisha Toshiba
Page Dale
Turocy & Watson LLP
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