Methods of fabricating semiconductor devices and structures...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device

Reexamination Certificate

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C257S900000, C257SE21626, C257SE21640

Reexamination Certificate

active

07659561

ABSTRACT:
Methods of forming spacers on sidewalls of features of semiconductor devices and structures thereof are disclosed. A preferred embodiment comprises a semiconductor device including a workpiece and at least one feature disposed over the workpiece. A first spacer is disposed on the sidewalls of the at least one feature, the first spacer comprising a first material. A first liner is disposed over the first spacer and over a portion of the workpiece proximate the first spacer, the first liner comprising the first material. A second spacer is disposed over the first liner, the second spacer comprising a second material. A second liner is disposed over the second spacer, the second liner comprising the first material.

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patent: 1 403 915 (2004-03-01), None

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