Phase change memory device

Details Phase change memory device Phase change memory device

2007-05-07

2010-06-08

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S003000, C257S005000, C438S095000, C438S102000, C438S103000

Reexamination Certificate

active

07732801

ABSTRACT:
A phase change memory device is provided. The phase change memory device includes a substrate with a first electrode layer formed thereon. A first phase change memory structure is on the first electrode layer and electrically connected to the first electrode layer. A second phase change memory structure is on the first phase change memory structure and electrically connected to the first phase change memory structure, wherein the first or second phase change memory structure includes a cup-shaped heating electrode. A first insulating layer covers a portion of the cup-shaped heating electrode along a first direction. A first electrode structure covers a portion of the first insulating layer and the cup-shaped heating electrode along a second direction. The first electrode structure includes a pair of phase change material sidewalls on a pair of sidewalls of the first electrode structure and covering a portion of the cup-shaped heating electrode.

REFERENCES:
patent: 6501111 (2002-12-01), Lowrey
patent: 2004/0197947 (2004-10-01), Fricke et al.
patent: 2005/0093022 (2005-05-01), Lung
patent: 2007/0152205 (2007-07-01), Chen
patent: 1339111 (2002-02-01), None

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