Process for fabricating a dielectric film using plasma...

Details Process for fabricating a dielectric film using plasma... Process for fabricating a dielectric film using plasma...

2001-07-30

2010-10-19

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

C365S051000

Reexamination Certificate

active

07816188

ABSTRACT:
A high density plasma oxidation process is provided in which a dielectric film is formed having a predetermined thickness. Plasma oxidation conditions are provided such that the growth rate of the dielectric film is limited in order to produce dielectric layer having a precise thickness and uniformity. The high density plasma oxidation process can be used to fabricate gate oxide layers, passivation layers and antifuse layers in semiconductor devices such as semiconductor memory devices and multi-level memory arrays.

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