Quantum dot based optoelectronic device and method of making...

Details Quantum dot based optoelectronic device and method of making... Quantum dot based optoelectronic device and method of making...

2005-06-27

2010-06-08

Gurley, Lynne A (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C257SE33014, C977S784000, C977S951000

Reexamination Certificate

active

07732237

ABSTRACT:
A method of forming an optically active region on a silicon substrate includes the steps of epitaxially growing a silicon buffer layer on the silicon substrate and epitaxially growing a SiGe cladding layer having a plurality of arrays of quantum dots disposed therein, the quantum dots being formed from a compound semiconductor material having a lattice mismatch with the silicon buffer layer. The optically active region may be incorporated into devices such as light emitting diodes, laser diodes, and photodetectors.

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