Surface emitting semiconductor device

Details Surface emitting semiconductor device Surface emitting semiconductor device

2007-07-19

2010-02-23

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010

Reexamination Certificate

active

07668219

ABSTRACT:
A surface emitting semiconductor device comprises: a semiconductor region including an active layer; a first DBR having first layers and second layers; and a second DBR. The first and second layers are alternately arranged, and the first layers are made of dielectric material. The first DBR, semiconductor region and second DBR are sequentially arranged along a predetermined axis, and the semiconductor region is provided between the first DBR and the second DBR. The cross section of the first DBR is taken along a reference plane perpendicular to the predetermined axis. The distance between two points on an edge of the cross section takes a first value in a direction of an X-axis of a two-dimensional XY orthogonal coordinate system defined on the reference plane, and the distance between two points on the edge takes a second value in a direction of a Y-axis of the above coordinate system. The first value is different from the second value. The cross section of the second DBR is taken along another reference plane perpendicular to the predetermined axis, and a shape of the cross section of the first DBR is different from a shape of the cross section of the second DBR.

REFERENCES:
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patent: 5877038 (1999-03-01), Coldren et al.
patent: 2002/0031155 (2002-03-01), Tayebati et al.
patent: 2003/0189963 (2003-10-01), Deppe et al.
patent: 2891133 (1999-02-01), None

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