Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-08-19
2010-10-12
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S094000
Reexamination Certificate
active
07812337
ABSTRACT:
A nitride semiconductor light emitting device includes a first nitride semiconductor layer, a first Al-doped nitride semiconductor layer formed on the first semiconductor layer, an activation layer formed on the first Al-doped nitride semiconductor buffer layer, and a second nitride semiconductor layer formed on the activation layer. Another nitride semiconductor light emitting device includes a first nitride semiconductor layer, an activation layer formed on the first nitride semiconductor layer, a second Al-doped nitride semiconductor buffer layer formed on the activation layer, and a second nitride semiconductor layer formed on the second Al-doped nitride semiconductor buffer layer. Still another nitride semiconductor light emitting device includes a first semiconductor layer, a first Al-doped nitride semiconductor buffer layer formed on the first nitride semiconductor layer, an activation layer formed on the first Al-doped nitride semiconductor buffer layer, a second Al-doped nitride semiconductor buffer layer formed on the activation layer, and a second nitride semiconductor layer formed on the second Al-doped nitride semiconductor buffer layer.
REFERENCES:
patent: 5990500 (1999-11-01), Okazaki
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6204084 (2001-03-01), Sugiura et al.
patent: 6849881 (2005-02-01), Harle et al.
patent: 2001/0035531 (2001-11-01), Kano et al.
patent: 2004/0159851 (2004-08-01), Edmond et al.
patent: 2005/0139818 (2005-06-01), Lee et al.
patent: 2005/0230688 (2005-10-01), Lee
patent: 199 55 747 (2001-05-01), None
patent: 2 344 461 (2000-06-01), None
patent: 10-12923 (1998-01-01), None
patent: 2000-196143 (2000-07-01), None
patent: 2000-349337 (2000-12-01), None
patent: 2002-33513 (2002-01-01), None
patent: 2002-0037111 (2002-05-01), None
patent: WO 2004/017431 (2004-02-01), None
Sakai S et al.: “Indium Silicon Co-doping in AIGaN/GaN multiple Quantum Wells”, Proceedings of International Workshop on Nitride Semiconductors, Jan. 1, 2000, pp. 637-639, XP009133538 ISBN: 978-4-900526-13-6.
Birch & Stewart Kolasch & Birch, LLP
LG Innotek Co. Ltd.
Louie Wai-Sing
Tang Sue
LandOfFree
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