Semiconductor device

Details Semiconductor device Semiconductor device

2008-08-27

2010-12-21

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C438S382000

Reexamination Certificate

active

07855433

ABSTRACT:
A semiconductor device has a semiconductor substrate having a first conductivity type and a resistor having a substantially U-shaped contour and being formed from an epitaxial layer disposed on the semiconductor substrate and having a second conductivity type different from the first conductivity type. A first trench is formed around an exterior of the resistor to a depth sufficient enough to reach the semiconductor substrate. A second trench is formed in an interior of the resistor to provide the resistor with the U-shaped contour. First and second insulating films are disposed in the first and second trenches, respectively. A heavily-doped region of the second conductivity type having an impurity concentration sufficient to obtain a contact with a metal wire is arranged at both ends of the resistor.

REFERENCES:
patent: 5661046 (1997-08-01), Ilderem et al.
patent: 6013940 (2000-01-01), Harada et al.
patent: 2001/0022385 (2001-09-01), Sakakibara et al.
Patent Abstracts of Japan, publication No. 06-140573, publication date May 20, 1994.
Patent Abstract of Japan, publication No. 09-051072, publication date Feb. 18, 1997.
Patent Abstracts of Japan, publication No. 2003-324196, publication date Nov. 14, 2003.

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