Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage
Patent
1994-08-15
1996-09-17
Callahan, Timothy P.
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
With specific source of supply or bias voltage
327536, 327537, H01L 2704
Patent
active
055572316
ABSTRACT:
A semiconductor device including an NMOS transistor includes a first bias generating circuit 30 for generating a substrate bias VBB1 for making smaller the amount of leak current in an inactive state, a second bias generating circuit 31 for generating a substrate bias VBB2 for increasing drivability of supplying current in the active state of the NMOS transistor, and a bias selecting circuit 32 responsive to a control signal CNT for supplying the substrate bias VBB2 instead of the substrate bias VBB1 to the silicon substrate 1. By changing the potential of the substrate bias in the standby state and the active state, power consumption in the standby state can be reduced and the speed of operation in the active state can be improved.
REFERENCES:
patent: 4096584 (1978-06-01), Owen, III. et al.
patent: 4233672 (1980-11-01), Suzuki et al.
patent: 4378506 (1983-03-01), Taira
patent: 4409496 (1983-10-01), Baba
patent: 4455628 (1984-06-01), Ozaki et al.
patent: 4460835 (1984-07-01), Masuoka
patent: 4631421 (1986-12-01), Inoue et al.
patent: 4883976 (1989-11-01), Deane
patent: 4946799 (1990-08-01), Blake et al.
patent: 4961007 (1990-10-01), Kumanoya et al.
patent: 5022005 (1991-06-01), Tohnishi
patent: 5034625 (1991-07-01), Min et al.
patent: 5034789 (1991-07-01), Black
patent: 5043597 (1991-08-01), Furuyama et al.
patent: 5124574 (1992-06-01), Ibaraki
patent: 5146110 (1992-09-01), Kim et al.
patent: 5162666 (1992-11-01), Tran
patent: 5191397 (1993-03-01), Yoshida
patent: 5202588 (1993-04-01), Matsuo et al.
patent: 5208557 (1993-05-01), Kersh, III
patent: 5233207 (1993-08-01), Anzai
patent: 5264721 (1993-11-01), Gotou
patent: 5360752 (1994-11-01), Brady et al.
patent: 5461338 (1995-10-01), Hirayama et al.
Solid States Electronic Device By Ben G. Streetman 1980.
Field Effect of Transistor Device By Robert F. Pierret vol. IV, 1990.
Electronic Circuit, by Donald L. Schilling, 1989.
"Calculated Threshold-Voltage Characteristics Of An XMOS Transistor Having An Additional Bottom Gate", Solid State Electronics, vol. 27, Nos. 8/9 (1984), pp. 827-828.
Nishimura Tadashi
Yamaguchi Yasuo
Callahan Timothy P.
Lam T.
Mitsubishi Denki & Kabushiki Kaisha
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