Vertical MOSFET with an aligned gate electrode and aligned drain

Details Vertical MOSFET with an aligned gate electrode and aligned drain Vertical MOSFET with an aligned gate electrode and aligned drain

1981-02-13

1984-06-19

Clawson, Jr., Joseph E.

357 238, 357 239, 357 2314, 357 53, 357 86, H01L 2978

Patent

active

044555652

ABSTRACT:
A vertical MOSFET includes source and gate electrodes on a major semiconductor surface, and a drain electrode on an opposing semiconductor surface. A shield electrode is disposed in proximity to the gate electrode so as to minimize feedback capacitance between the gate electrode and drain region. Additionally, the shield electrode increases the level of space charge limited current that can be supported in the drain region, and minimizes current crowding in the device.

REFERENCES:
patent: 3845495 (1974-10-01), Cauge et al.
patent: 4172260 (1979-10-01), Okabe et al.

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