Memory cell having a side electrode contact

Details Memory cell having a side electrode contact Memory cell having a side electrode contact

2007-09-28

2010-02-16

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE45002, C438S102000, C365S148000

Reexamination Certificate

active

07663135

ABSTRACT:
Memory cells are described along with methods for manufacturing. A memory cell as described herein includes a bottom electrode, a memory element and a side electrode. The bottom electrode contacts the memory element at a first contact surface on the bottom of the memory element. The side electrode contacts the memory element at a second contact surface on the side of the memory element, where the second contact surface on the side faces laterally relative to the first contact surface on the bottom.

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