Semiconductor memory device and method of manufacturing the...

Details Semiconductor memory device and method of manufacturing the... Semiconductor memory device and method of manufacturing the...

2007-05-25

2010-12-07

Stark, Jarrett J (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S347000, C257SE29273, C438S149000

Reexamination Certificate

active

07847322

ABSTRACT:
This disclosure concerns a semiconductor memory device comprising a semiconductor substrate; a first dielectric film provided on the semiconductor substrate; two Fins provided on the first dielectric film and made of a semiconductor material; a second dielectric film provided on facing inner side surfaces among side surfaces of the two Fins; a third dielectric film provided on outer side surfaces among side surfaces of the two Fins; a gate electrode provided via the second dielectric film between the inner side surfaces of the two Fins; and a plate electrode provided via the third dielectric film on the outer side surfaces of the two Fins, wherein the two Fins, the gate electrode, and the plate electrode are included in one memory cell.

REFERENCES:
patent: 6778424 (2004-08-01), Iwata et al.
patent: 7075820 (2006-07-01), Yamada et al.
patent: 2004/0126969 (2004-07-01), Brown et al.
patent: 2003-86712 (2003-03-01), None
patent: 2005-191451 (2005-07-01), None
Sung Min Kim, et al. “A Novel Multi-channel Field Effect Transistor (McFET) on Bulk Si for High Performance Sub-80nm Application,” IEDM, IEEE, 2004, pp. 639-642.
Takashi Ohsawa, et al., “Memory Design Using a One-Transistor Gain Cell on SOI,” IEEE journal of Solid-State Circuits, vol. 37, No. 11, Nov. 2002, pp. 1510-1522.

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