Integrated III-nitride devices

Details Integrated III-nitride devices Integrated III-nitride devices

2007-01-08

2010-10-26

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S183000, C257S200000, C257SE29120, C257SE29178

Reexamination Certificate

active

07821034

ABSTRACT:
A III-nitride heterojunction semiconductor device that includes a power electrode that is electrically connected to a conductive substrate through a trench in the heterojunction thereof.

REFERENCES:
patent: 6492669 (2002-12-01), Nakayama et al.
patent: 6696726 (2004-02-01), Bencuya et al.
patent: 2006/0289894 (2006-12-01), Murata et al.
patent: 2006/0289901 (2006-12-01), Sheppard et al.

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