Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2007-03-13
2010-10-26
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S422000
Reexamination Certificate
active
07821087
ABSTRACT:
A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).
REFERENCES:
patent: 6381106 (2002-04-01), Pinarbasi
patent: 6532164 (2003-03-01), Redon et al.
patent: 6781872 (2004-08-01), Saito et al.
patent: 7242045 (2007-07-01), Nguyen et al.
patent: 2002/0105827 (2002-08-01), Redon et al.
patent: 2003/0007398 (2003-01-01), Daughton et al.
patent: 2003/0059588 (2003-03-01), Hannah et al.
J.F. Albert et al., Spin Polarized Current Switching of a CO Thin Film Nanomagnet, American Institute of Physics, vol. 77, No. 23, Dec. 4, 2000, pp. 3809-3811.
J.A. Katine, et al., Current-Driven Magnetization Reversal and Spin-Wave Excitations in Co/Cu/Co Pillars, Physical Review Letters, vol. 84, No. 14, Apr. 3, 2000, pp. 3149-3151.
E.G. Myers, et al., Point-Contact Studies of Current-Controlled Domain Switching in Magnetic Multilayers, Journal of Applied Physics, vol. 87, No. 9, May 1, 2000, pp. 5502-5503.
J.C. Slonczewski, Theory and Application of Exchange-Driven Switching, IEEE, Apr. 2000, pp. CE-02.
J.C. Slonczewski, Current-Driven Excitation of Magnetic Multilayers, Journal of Magnetism and Magnetic Materials, 1996, pp. 1.1-1.7.
J.C. Slonczewski, Conductance and exchange coupling of two ferromagnets separated by a tunneling barrier, Physical Review B, vol. 39, No. 10, Apr. 1, 1999, pp. 6995-7002.
J.Z. Sun, Current-driven magnetic switching in manganite trilayer junctions, Journal of Magnetism and Magnetic Materials, No. 202, 1999, pp. 157-162.
Naoki Nishimura, et al., Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory, Journal of Applied Physics, vol. 91, No. 8, Apr. 2002, pp. 5246-5249.
L. Berger, Emission of spin waves by a magnetic multilayer traversed by a current, Physical Review B, vol. 54, No. 13, Oct. 1, 1996, pp. 9353-9358.
William Bailey, et al., Control of Magnetization Dynamics in Ni81Fe19 Thin Films Through the Use of Rare-Earth Dopants, IEEE Transactions on Magnetics, vol. 37, No. 4, Jul. 2001, pp. 1749-1754.
Albert Frank
Diao Zhitao
Huai Yiming
Nguyen Paul
Convergent Law Group LLP
Grandis Inc.
Menz Douglas M
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