Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2009-08-26
2010-12-14
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S027000, C257SE21502, C257SE33023
Reexamination Certificate
active
07851240
ABSTRACT:
A method of forming a diffraction grating according to the present invention includes a step of preparing a mold having projections and recesses for forming a diffraction grating, a step of bringing the projections and recesses of the mold into contact with a resin layer in a chamber at a first pressure less than atmospheric pressure, a step of setting a pressure in the chamber to a second pressure more than the first pressure while maintaining the contact, and a step of hardening the resin layer while maintaining the contact between the resin layer and the projections and recesses so as to form a pattern for the diffraction grating on the hardened resin layer. The recesses in the projections and recesses of the mold form a closed pattern in the plane of the mold including the projections and recesses.
REFERENCES:
patent: 7709282 (2010-05-01), Fukshima et al.
patent: 2006/0151435 (2006-07-01), Taniguchi
Stephen Y. Chou et al., “Nanoimprint lithography”, The Journal of Vacuum Science and Technology B, 14(6), Nov./Dec. 1996, pp. 4129-4133.
Ghyka Alexander G
Nikmanesh Seahvosh J
Smith , Gambrell & Russell, LLP
Sumitomo Electric Industries Ltd.
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