Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Reexamination Certificate
2004-05-28
2010-06-29
Nguyen, Khiem D (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
C257S738000, C257SE21577
Reexamination Certificate
active
07745931
ABSTRACT:
A BGA type semiconductor device having high reliability is offered. A pad electrode is formed on a surface of a semiconductor substrate and a glass substrate is bonded to the surface of the semiconductor substrate. A via hole is formed from a back surface of the semiconductor substrate to reach a surface of the pad electrode. An insulation film is formed on an entire back surface of the semiconductor substrate including an inside of the via hole. A cushioning pad is formed on the insulation film. The insulation film is removed from a bottom portion of the via hole by etching. A wiring connected with the pad electrode is formed to extend from the via hole onto the cushioning pad. A conductive terminal is formed on the wiring. Then the semiconductor substrate is separated into a plurality of semiconductor dice.
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European Search Report dated Feb. 27, 2007, directed at counterpart EP application No. 04012460.
Morrison & Foerster / LLP
Nguyen Khiem D
Sanyo Electric Co,. Ltd.
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