Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-06-09
2010-11-02
Pham, Thanhha (Department: 2894)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S095000, C438S711000, C216S075000
Reexamination Certificate
active
07825033
ABSTRACT:
A method of etching a material that includes comprising germanium, antimony, and tellurium encompasses exposing said material to a plasma-enhanced etching chemistry comprising Cl2and CH2F2. A method of forming a variable resistance memory cell includes forming a conductive inner electrode material over a substrate. A variable resistance chalcogenide material comprising germanium, antimony, and tellurium is formed over the conductive inner electrode material. A conductive outer electrode material is formed over the chalcogenide material. The germanium, antimony, and tellurium-comprising material is plasma etched using a chemistry comprising Cl2and CH2F2.
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Micro)n Technology, Inc.
Pham Thanhha
Tran Tony
Wells St. John P.S.
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