Vertical cavity surface emitting laser with undoped top mirror

Details Vertical cavity surface emitting laser with undoped top mirror Vertical cavity surface emitting laser with undoped top mirror

2005-09-08

2010-12-28

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S050124, C372S034000

Reexamination Certificate

active

07860137

ABSTRACT:
A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active layer. The periodically doped conduction layer is heavily doped at locations where the optical energy is at a minimum when the VCSEL is in operation. A current aperture is used between the conduction layer and the active region. An undoped top mirror is formed on the heavily doped conduction layer.

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