Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2008-03-18
2010-06-08
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S113000, C438S460000, C438S052000, C438S508000
Reexamination Certificate
active
07732239
ABSTRACT:
A method using a divided exposure technology is provided for restraining deterioration in the performance of a solid-state image sensor. A photoresist is formed over a semiconductor substrate and subjected to divided exposure. A dividing line for divided exposure is located at least over a region of a semiconductor substrate in which an active region in which a pixel is to be formed is defined. The photoresist is then developed and patterned. By utilizing the patterned photoresist, an element isolation structure for defining the active region in the semiconductor substrate is formed in the semiconductor substrate.
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Honda Hiroki
Kimura Masatoshi
Le Dung A.
Miles & Stockbridge P.C.
Renesas Technology Corp.
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