III-nitride power semiconductor device

Details III-nitride power semiconductor device III-nitride power semiconductor device

2007-01-26

2010-10-26

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S183000, C257S194000, C257SE29246, C257SE29252, C257SE21371, C257SE21387, C257SE21403, C257SE21407

Reexamination Certificate

active

07821032

ABSTRACT:
An enhancement mode III-nitride power semiconductor device that includes normally-off channels along the sidewalls of a recess and a process for fabricating the same, the device including a first power electrode, a second power electrode, and a gate disposed between the first power electrode and the second power electrode over at least a sidewall of the recess.

REFERENCES:
patent: 7038252 (2006-05-01), Saito et al.
patent: 2004/0157355 (2004-08-01), Kachi et al.
patent: 2005/0145883 (2005-07-01), Beach et al.
patent: 2005/0258450 (2005-11-01), Saxler
patent: 2006/0065912 (2006-03-01), Beach
patent: 2007/0114567 (2007-05-01), Matocha et al.
patent: 2007/0176201 (2007-08-01), Beach et al.
patent: 7-231085 (2007-09-01), None

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