Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-09-14
2010-11-09
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S720000, C257S741000, C257S772000, C257S778000
Reexamination Certificate
active
07830009
ABSTRACT:
A semiconductor package is disclosed that includes a semiconductor device; a circuit board; and a connection mechanism including a first conductive terminal provided on the semiconductor device, and a second conductive terminal provided on the circuit board side, the connection mechanism electrically connecting the semiconductor device and the circuit board via the first conductive terminal and the second conductive terminal. At least one of the first conductive terminal and the second conductive terminal of the connection mechanism includes one or more carbon nanotubes each having one end thereof fixed to the surface of the at least one of the first conductive terminal and the second conductive terminal, and extending in a direction away from the surface. The first conductive terminal and the second conductive terminal engage each other through the carbon nanotubes.
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M. Nihei, et al.; “Simultaneous formation of multi-wall carbon nanotubes and their low-resistance ohmic contacts for future ULSI via internconnects;”Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials; 2003; pp. 798-799.
Awano Yuji
Mizukoshi Masataka
Fujitsu Limited
Kratz Quintos & Hanson, LLP
Lee Kyoung
Richards N Drew
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