Semiconductor device having barrier layer comprised of...

Details Semiconductor device having barrier layer comprised of... Semiconductor device having barrier layer comprised of...

2007-07-13

2010-10-12

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S295000, C257S310000, C257S767000, C257SE23145, C257SE23160

Reexamination Certificate

active

07812452

ABSTRACT:
A semiconductor device according to the present invention includes a semiconductor substrate; a capacitor having a lower electrode formed on said semiconductor substrate, a capacity insulating film formed on said lower electrode, and an upper electrode formed on said capacity insulating film; contact holes formed on said upper electrode and said lower electrode; a barrier layer containing oxygen, formed inside said contact holes; and a conductive layer which fills said contact holes in which said barrier layer is formed on the inside.

REFERENCES:
patent: 6225656 (2001-05-01), Cuchiaro et al.
patent: 2006/0220083 (2006-10-01), Abe
patent: 2007/0045687 (2007-03-01), Kumura et al.
patent: 2008/0224194 (2008-09-01), Sashida
patent: 6-151815 (1994-05-01), None
patent: 8-181212 (1996-07-01), None

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