Nitride semiconductor device and method for manufacturing same

Details Nitride semiconductor device and method for manufacturing same Nitride semiconductor device and method for manufacturing same

2006-03-09

2010-10-19

Such, Matthew W (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C438S029000, C438S476000, C257SE33005, C257SE33043, C257SE33074

Reexamination Certificate

active

07816696

ABSTRACT:
An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate10; a semiconductor multilayer structure100formed on a principal face of the n-GaN substrate10, the semiconductor multilayer structure100including a p-type region and an n-type region; a p-side electrode32which is in contact with a portion of the p-type region included in the semiconductor multilayer structure100; and an n-side electrode34provided on the rear face of the n-GaN substrate10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode34is adjusted to 5 atom % or less.

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International Search Report for corresponding Application No. PCT/JP2006/304596 mailed Apr. 4, 2006.
Form PCT/ISA/237 and partial English translation.

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