Method of reading dual-bit memory cell

Details Method of reading dual-bit memory cell Method of reading dual-bit memory cell

2007-09-28

2010-11-09

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Floating gate

Multiple values

C365S185250, C365S185160

Reexamination Certificate

active

07830707

ABSTRACT:
A method of reading a dual-bit memory cell includes a controlling terminal, a first terminal, and a second terminal. The dual-bit memory cell has a first bit storage node and a second bit storage node near the first terminal and the second terminal respectively. First, a controlling voltage and a read voltage are applied to the controlling terminal and the first terminal respectively. The second terminal is grounded to measure a first output current value of the first terminal. Then, the controlling voltage and the read voltage are applied to the controlling terminal and the second terminal respectively. The first terminal is grounded to measure a second output current value of the second terminal. Afterward, the bit state of the first bit storage node and the bit state of the second bit storage node is read simultaneously according to the first output current value and the second output current value.

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