Method of manufacturing a semiconductor device using a wet...

Details Method of manufacturing a semiconductor device using a wet... Method of manufacturing a semiconductor device using a wet...

2005-03-09

2010-06-01

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S687000, C438S627000, C438S629000, C438S643000, C438S653000, C257S762000, C257S751000, C257S774000, C257SE21081, C257SE21576, C257SE21579, C257SE21227, C257SE21583, C257SE21584, C257SE21585, C257SE21586

Reexamination Certificate

active

07727891

ABSTRACT:
A method of manufacturing a semiconductor device, including the following processes of forming a structure in which a barrier metal containing at least of Ti and Ta and a copper wiring are exposed on its surface, or a structure in which at least one substance selected from the group consisting of Ti, W, and Cu and Al are exposed on its surface, above a semiconductor substrate, and supplying a hydrogen-dissolved solution dissolving hydrogen gas to the surface of the structure.

REFERENCES:
patent: 5804505 (1998-09-01), Yamada et al.
patent: 6117775 (2000-09-01), Kondo et al.
patent: 6287968 (2001-09-01), Yu et al.
patent: 6290777 (2001-09-01), Imaoka et al.
patent: 6346505 (2002-02-01), Morita et al.
patent: 6348157 (2002-02-01), Ohmi et al.
patent: 6551943 (2003-04-01), Eissa et al.
patent: 6592677 (2003-07-01), Tomimori et al.
patent: 6613585 (2003-09-01), Sakurai et al.
patent: 6613664 (2003-09-01), Barth et al.
patent: 6645852 (2003-11-01), Taguchi et al.
patent: 6723631 (2004-04-01), Noguchi et al.
patent: 6727593 (2004-04-01), Toyoda et al.
patent: 6943115 (2005-09-01), Horiuchi et al.
patent: 6946036 (2005-09-01), Tsuga et al.
patent: 11-29794 (1999-02-01), None
patent: 11-307497 (1999-11-01), None
patent: 11-330023 (1999-11-01), None
patent: 2000-277520 (2000-06-01), None
patent: 2001-25715 (2001-01-01), None
patent: 2001-358111 (2001-12-01), None
patent: 2002-33385 (2002-01-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device using a wet... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device using a wet..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device using a wet... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4151999