Pin photodiode structure

Details Pin photodiode structure Pin photodiode structure

2008-07-15

2010-06-08

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S618000, C257S656000, C257SE29336, C257SE31061, C257SE31062, C257SE31087, C257SE31088, C257SE33046

Reexamination Certificate

active

07732886

ABSTRACT:
A PIN photodiode structure includes a substrate, a P-doped region disposed in the substrate, an N-doped region disposed in the substrate, and a first semiconductor material disposed in the substrate and between the P-doped region and the N-doped region.

REFERENCES:
patent: 5432366 (1995-07-01), Banerjee et al.
patent: 6303979 (2001-10-01), Kasahara
patent: 6335558 (2002-01-01), Drobny et al.
patent: 6429499 (2002-08-01), Heineke et al.
patent: 6437372 (2002-08-01), Geva et al.
patent: 6635110 (2003-10-01), Luan et al.
patent: 6713796 (2004-03-01), Fox
patent: 6737718 (2004-05-01), Takeuchi
patent: 6991892 (2006-01-01), Block
patent: 7008813 (2006-03-01), Lee et al.
patent: 7397101 (2008-07-01), Masini et al.
patent: 7557418 (2009-07-01), Nakaji et al.
patent: 7560784 (2009-07-01), Cheng et al.
patent: 2004/0135235 (2004-07-01), Poveda
patent: 2006/0091490 (2006-05-01), Chen et al.
patent: 2009/0115016 (2009-05-01), Iwai
Donghwan Ahn, et al., “High performance, waveguide integrated Ge photodetectors”, Apr. 2, 2007, 3916-3921, vol. 15, No. 7, Optics Express.

Affiliated with

Also associated with

Rating

Pin photodiode structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pin photodiode structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pin photodiode structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4151931