Ion beam inspection apparatus, ion beam inspecting method,...

Details Ion beam inspection apparatus, ion beam inspecting method,... Ion beam inspection apparatus, ion beam inspecting method,...

2008-04-08

2010-10-05

Souw, Bernard E (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S492200

Reexamination Certificate

active

07807985

ABSTRACT:
The central axis of a source head and an extraction electrode is aligned on a line, and confirmed by a laser beam whether the line is coaxial with the ion beam axis. Thus, a light emitting unit that emits the laser beam on the ion beam axis is fitted to a housing instead of the source head, and a reflector that reflects the laser beam is fitted to the extraction electrode. A light emitting apparatus also has a function of detecting the laser beam to detect the laser beam that is reflected by the reflector, and sends the intensity of the detected laser beam to a control unit. The extraction electrode is positionally adjusted so that the intensity of the laser beam becomes maximum, whereby the ion beam axis can coincide with the central axes of the ion source and the extraction electrode.

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Patent Abstracts of Japan, publication No. 64-014855, publication date Jan. 19, 1989.

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