Method for forming a lens using sub-micron horizontal tip...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S057000, C438S064000

Reexamination Certificate

active

07858428

ABSTRACT:
A method for creating graded or tapered dopant profiles in a semiconductor layer or layers. Preferably, a sub-micron horizontal tip feature is used to control the doping of the layer beneath the feature.

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VLSI Fabrication Principles Silicon and Gallium Arsenide, second edition,John Wiley & Sons Inc. 1994, pp. 420-423.

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