Semiconductor laser device and resin layer

Details Semiconductor laser device and resin layer Semiconductor laser device and resin layer

1993-12-22

1996-09-17

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Encapsulated

257433, 257690, 372 43, 372 49, H01L 3300, H01S 318

Patent

active

055571166

ABSTRACT:
A semiconductor laser device includes a base, a semiconductor laser chip and a resin layer enclosing the laser chip. The base may have a monitor photodiode mounted thereon in the vicinity of the laser chip. The resin layer enclosing the laser chip or both of the laser chip and the monitor diode chip is made of a single synthetic resin having a thickness not greater than 500 .mu.m and also having a surface substantially parallel to an outwardly oriented beam emitting end face of the laser chip.

REFERENCES:
patent: 4733067 (1988-03-01), Oinoue et al.
patent: 4768070 (1988-08-01), Takizawa et al.
patent: 4818099 (1989-04-01), Preikschat et al.
patent: 4962985 (1990-10-01), LeGrange
patent: 5089861 (1992-02-01), Tanaka et al.
patent: 5130531 (1992-07-01), Ito et al.
patent: 5226052 (1993-07-01), Tanaka et al.
patent: 5355385 (1994-10-01), Amano et al.

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