Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

2006-09-08

2010-06-15

Donovan, Lincoln (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

C327S530000

Reexamination Certificate

active

07737771

ABSTRACT:
A bias generation circuit is between a power voltage node and ground voltage node at a far end from power voltage and ground voltage terminals. Reference voltage nodes are connected to an amplifier circuit block from the far end. The amplifier block is closer to the power supply source, and the bias generation circuit is distant therefrom. Even if the power supply voltage drops due to current constantly flowing in the amplification block and bias generation circuit, the bias generation circuit generates reference voltages at the reference voltage nodes based on the voltage-dropped power supply. Therefore, the voltage in the constant current source MOS transistor of the amplifier block becomes lowest at the amplifier circuit closest to the bias generation circuit. The response speeds of other amplifier circuits do not drop if the circuit is designed based on the amplifier closest to the bias generation circuit.

REFERENCES:
patent: 6414557 (2002-07-01), Liu
patent: 6456270 (2002-09-01), Itakura
patent: 7057529 (2006-06-01), Bourgault
patent: 7394638 (2008-07-01), Ahmad et al.
patent: 2000-310981 (2000-11-01), None

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