Method of manufacturing a substrate-free flip chip light...

Details Method of manufacturing a substrate-free flip chip light... Method of manufacturing a substrate-free flip chip light...

2005-06-08

2009-12-01

Gebremariam, Samuel A (Department: 2811)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C438S022000, C438S026000, C438S039000, C438S041000, C438S455000, C257SE33005, C257SE33006, C257SE33057, C257SE33063, C257SE33064

Reexamination Certificate

active

07625778

ABSTRACT:
A substrate-free LED device is provided. The LED device comprises a substrate, an epitaxial layer disposed on the substrate, a first electrode disposed on a portion of the epitaxial layer, a second electrode disposed on another portion of the epitaxial layer, and a protection layer, disposed over the epitaxial layer. It is noted that in the LED device, the substrate comprises, for example but not limited to, high heat-sink substrate, and the protection layer comprises, for example but not limited to, high heat-sink, high transparent material.

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Chen-Fu Chu et al., “Comparison of p-Side Down and p-Side Up GaN light-Emitting Diodes Fabricated by Laser Lift-Off” The Japan Society of Applied Physics, vol. 42 (2003), pp. L147-L150 Part 2, No. 2B, Feb. 15, 2003.

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