Television – Camera – system and detail – Solid-state image sensor
Reexamination Certificate
2005-04-06
2009-06-09
Villecco, John M (Department: 2622)
Television
Camera, system and detail
Solid-state image sensor
C348S248000, C250S208100, C257S230000
Reexamination Certificate
active
07545425
ABSTRACT:
In an MOS type solid-state image pickup device in which unit pixels each including a photodiode, a transfer transistor for transferring the signal of the photodiode to a floating node N11, an amplifying transistor for outputting the signal of the floating node to a vertical signal line, and a reset transistor for resetting the floating node are arranged in a matrix form, a P-type MOS transistor is connected between a drain line to which the drain of the reset transistor is connected and a V shift register for selectively supplying the reset voltage to the drain line, and the potential of the floating node is set to the channel voltage of the P-type MOS transistor at the non-selection time.
REFERENCES:
patent: 5406332 (1995-04-01), Shinohara et al.
patent: 5786588 (1998-07-01), Takahashi
patent: 5841159 (1998-11-01), Lee et al.
patent: 5907357 (1999-05-01), Maki
patent: 5917547 (1999-06-01), Merrill et al.
patent: 6049357 (2000-04-01), Shinohara
patent: 6118115 (2000-09-01), Kozuka et al.
patent: 6140630 (2000-10-01), Rhodes
patent: 6141050 (2000-10-01), Ackland et al.
patent: 6215113 (2001-04-01), Chen et al.
patent: 6218656 (2001-04-01), Guidash
patent: 6380976 (2002-04-01), Borg
patent: 6384394 (2002-05-01), Afghahi
patent: 6593560 (2003-07-01), Misek
patent: 6727946 (2004-04-01), Zhao et al.
patent: 6825878 (2004-11-01), Rhodes
patent: 6947087 (2005-09-01), Egawa et al.
patent: 6958775 (2005-10-01), Shinotsuka et al.
patent: 6963372 (2005-11-01), Hiyama et al.
patent: 7005626 (2006-02-01), Chan et al.
patent: 7071980 (2006-07-01), Yuki et al.
patent: 7277130 (2007-10-01), Korthout et al.
patent: 2003/0146993 (2003-08-01), Kokubun et al.
patent: 0 908 957 (1999-04-01), None
patent: WO 98/56168 (1998-12-01), None
Suntharalingam et al.; “Megapixel CMOS image sensor fabricated in three-dimensional integrated circuit technology”; 2005 IEEE International Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. Feb. 10, 2005; pp. 356-357.
Chen et al.; “Low Voltage CMOS active pixel sensor design methodology with device scaling considerations”; 2001 IEEE Hong Kong Electron Devices Meeting. 2001. Proceedings. Jun. 20, 2001; pp. 21-24.
Kananen Ronald P.
Rader & Fishman & Grauer, PLLC
Sony Corporation
Villecco John M
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