Non-equal threshold voltage ranges in MLC NAND

Details Non-equal threshold voltage ranges in MLC NAND Non-equal threshold voltage ranges in MLC NAND

2007-10-10

2009-12-29

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Multiple values

C365S185240

Reexamination Certificate

active

07639532

ABSTRACT:
Memory devices adapted to process and generate analog data signals representative of data values of two or more bits of information facilitate increases in data transfer rates relative to devices processing and generating only binary data signals indicative of individual bits. Programming of such memory devices includes programming to a target threshold voltage range representative of the desired bit pattern. Reading such memory devices includes generating an analog data signal indicative of a threshold voltage of a target memory cell. Threshold voltage ranges of the memory cells have a larger range size for ranges that include lower threshold voltages and a smaller range size for ranges that include higher threshold voltages since program disturb is lower at higher threshold voltages.

REFERENCES:
patent: 6061751 (2000-05-01), Bruner et al.
patent: 6084538 (2000-07-01), Kostelnik et al.
patent: 7158335 (2007-01-01), Park et al.
patent: 7372767 (2008-05-01), Kim
patent: 2008/0019181 (2008-01-01), Chen et al.
patent: 2008/0062760 (2008-03-01), Kim

Affiliated with

Also associated with

Rating

Non-equal threshold voltage ranges in MLC NAND does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-equal threshold voltage ranges in MLC NAND, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-equal threshold voltage ranges in MLC NAND will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4148940