Terminal connection structure for semiconductor device

Details Terminal connection structure for semiconductor device Terminal connection structure for semiconductor device

2006-04-27

2009-12-15

Clark, S. V (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S784000

Reexamination Certificate

active

07633166

ABSTRACT:
A first wiring member and a second wiring member, through which currents flow in directions opposite to each other, each have a flat plate shape and are arranged to be adjacent and opposed to each other, to thereby reduce inductances of the first wiring member and the second wiring member due to an effect of a mutual inductance. A joint of the first wiring member and a joint of the second wiring member are joined to the positive terminal and the negative terminal of the semiconductor device through ultrasonic bonding, respectively. As a result, the joint of the first wiring member and the joint of the second wiring member are not required to be provided with exclusive portions for screw mounting unlike a conventional manner, so each of the joints can have a small area, to thereby making it possible to reduce inductances of the first wiring member and the second wiring member.

REFERENCES:
patent: 5212405 (1993-05-01), Oigawa
patent: 5250839 (1993-10-01), Katoh et al.
patent: 5293066 (1994-03-01), Tsumura
patent: 6329714 (2001-12-01), Guillot
patent: 06-069415 (1994-03-01), None

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