Multi-layer electrode and compound semiconductor light...

Details Multi-layer electrode and compound semiconductor light... Multi-layer electrode and compound semiconductor light...

2005-09-30

2009-06-30

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Reexamination Certificate

active

07554125

ABSTRACT:
A multi-layer electrode and a compound semiconductor light emitting device comprising the same. A multi-layer electrode for the compound semiconductor light emitting device may be formed on a p-type compound semiconductor layer of the compound semiconductor light emitting device and may include: a first electrode layer formed on the p-type compound semiconductor layer which comprises a substance selected from the group consisting of a transparent conductive oxide, a non-conductive oxide, and a nitride; and a second electrode layer formed on the first electrode layer which comprises a substance selected from the group consisting of a transparent conductive oxide, a non-conductive oxide, and a nitride.

REFERENCES:
patent: 5200668 (1993-04-01), Ohashi et al.
patent: 1995-111 (1995-01-01), None

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