Semiconductor IC-embedded substrate and method for...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor

Reexamination Certificate

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C257SE21499

Reexamination Certificate

active

07544537

ABSTRACT:
A semiconductor IC-embedded substrate suitable for embedding a semiconductor IC in which the electrode pitch is extremely narrow. The substrate comprises a semiconductor IC120in which stud bumps121are provided to the principal surface120a,a first resin layer111for covering the principal surface120aof the semiconductor IC120,and a second resin layer112for covering the back surface120bof the semiconductor IC120.The stud bumps121of the semiconductor IC120protrude from the surface of the first resin layer111.The method for causing the stud bumps121to protrude from the surface of the first resin layer111may involve using a wet blasting method to cause an overall reduction of the thickness of the first resin layer111.The stud bumps121can thereby be properly uncovered even when the electrode pitch of the semiconductor IC120is narrow.

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