Method for detecting erroneous word lines of a memory array...

Details Method for detecting erroneous word lines of a memory array... Method for detecting erroneous word lines of a memory array...

2008-05-06

2009-11-24

Dinh, Son (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S189070, C365S189140

Reexamination Certificate

active

07623388

ABSTRACT:
A method detects if a word line of a memory array is broken. The method includes writing a first datum to a memory cell when coupling a corresponding word line to a voltage source, writing a second datum different from the first datum to the memory cell when the coupling between the corresponding word line and the voltage source is decoupled, reading the stored data of the memory cell, and determining if the word line is broken according to the read data, the first datum, and the second datum.

REFERENCES:
patent: 5602789 (1997-02-01), Endoh et al.
patent: 7196946 (2007-03-01), Chen et al.

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