Shifting reference values to account for voltage sag

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185200, C365S185210, C365S185030, C365S185080, C365S185090

Reexamination Certificate

active

07613043

ABSTRACT:
A system and method, including software implemented techniques, can be used to adjust for sag in stored data values. Charge is applied to multiple memory cells, and each memory cell is charged to a target voltage corresponding to a data value. The memory cells include a reference cell that is charged to a predetermined voltage. A voltage level in the reference cell is detected, and voltage levels from a group of memory cells are also detected. An adjustment is performed based upon the difference between the detected voltage level in the reference cell and the predetermined voltage.

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