Method for producing multijunction solar cell

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S062000, C438S069000, C438S072000, C438S074000, C438S095000, C257SE21102

Reexamination Certificate

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07615400

ABSTRACT:
There is provided a method for producing a multijunction solar cell having four-junctions, the method allowing the area of a device to be increased. On a nucleation site formed on a substrate2,is grown a semiconductor2acomprising the same material as the substrate2in the shape of a wire. On the semiconductor2a,are successively grown semiconductors3, 4, 5,and6with a narrower band gap in the shape of a wire. The semiconductor3may be directly grown in the shape of a wire on the nucleation site formed on the substrate2.It is preferred to form the nucleation site by forming an amorphous SiO2coating8aon the substrate2and etching a part of the amorphous SiO2coating8a.Further, it is preferred to form an insulating film8in the region except the nucleation sites on the substrate2by allowing the amorphous SiO2coating8ato remain therein. The semiconductor2ais GaP; the semiconductor3is Al0.3Ga0.7As; the semiconductor4is GaAs; the semiconductor5is In0.3Ga0.7As; and the semiconductor6is In0.6Ga0.4As.

REFERENCES:
patent: 2006/0207647 (2006-09-01), Tsakalakos et al.
patent: 09-064386 (1997-03-01), None
J.F. Geisz, D.J. Friedman, C. Kramer, A. Kibbler, and S.R. Kurtz, “New Materials for Future Generations of III-V Solar Cells”, NREL/CP-520-25631, National Renewable Energy Laboratory, Dec. 1998.
Akira Ohmae, Yukiko Shimizu, and Yoshitaka Okada, “GalnNAs for Multi-Junction Tandem Solar Cells”, Photovoltaic Energy Conversion, 2003, Proceedings of 3rd World conference on vol. 2, May 12-16, 2003.

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