Photo-semiconductor device and method of manufacturing the same

Details Photo-semiconductor device and method of manufacturing the same Photo-semiconductor device and method of manufacturing the same

2005-03-24

2009-11-10

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

C372S004000

Reexamination Certificate

active

07615787

ABSTRACT:
A photo-semiconductor device comprises a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a first semiconductor substrate different from the second substrate, the second substrate being also provided with electrodes, the electrodes of the second substrate and the electrodes of the photoconductive semiconductor film being held in contact with each other.

REFERENCES:
patent: 5701325 (1997-12-01), Ouchi et al.
patent: 5850408 (1998-12-01), Ouchi et al.
patent: 6046096 (2000-04-01), Ouchi
patent: 6055251 (2000-04-01), Ouchi et al.
patent: 6089442 (2000-07-01), Ouchi et al.
patent: 6222868 (2001-04-01), Ouchi et al.
patent: 6320691 (2001-11-01), Ouchi et al.
patent: 6477286 (2002-11-01), Ouchi
patent: 6507594 (2003-01-01), Furukawa et al.
patent: 6573737 (2003-06-01), Lyon et al.
patent: 6771677 (2004-08-01), Furukawa et al.
patent: 6836579 (2004-12-01), Ouchi
patent: 6873165 (2005-03-01), Lee et al.
patent: 6970612 (2005-11-01), Ouchi
patent: 2004/0184495 (2004-09-01), Kondo
patent: 2005/0058166 (2005-03-01), Hu et al.
patent: 2005/0233490 (2005-10-01), Kasai et al.
patent: 2006/0056757 (2006-03-01), Ouchi
patent: 10-104171 (1998-04-01), None
patent: 2002-98634 (2002-04-01), None
Matsuura, S. et al., “Generation of coherent terahertz radiation by photomixing in dipole photoconductive antennas,” American Institute of Physics, Appl. Phys. Lett. (Feb. 3, 1997) vol. 70 (No. 5), pp. 559-561.

Affiliated with

Also associated with

Rating

Photo-semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photo-semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photo-semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4142847