Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-10-11
2009-10-13
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010
Reexamination Certificate
active
07602829
ABSTRACT:
According to an aspect of the embodiment, there is provided a semiconductor light emitting device including: a gallium nitride substrate; a multilayer film of nitride semiconductors provided on the gallium nitride substrate; a first film including a first silicon nitride layer; and a second film including a second silicon nitride layer and a laminated film provided on the second silicon nitride layer. The gallium nitride substrate and the multilayer film have a laser light emitting facet and a laser light reflecting facet. The first silicon nitride layer is provided on the laser light emitting facet. The multilayer film includes a light emitting layer, and the multilayer film has a laser light emitting facet and a laser light reflecting facet. The second silicon nitride layer is provided on the laser light reflecting facet, and the laminated film includes oxide layer and silicon nitride layer which are alternately laminated.
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Chinese Office Action of Chinese Application No. 2006101423916 dated Dec. 21, 2007 and English thereof.
Matsuyama Takayuki
Onomura Masaaki
Banner & Witcoff Ltd
Harvey Minsun
Kabushiki Kaisha Toshiba
Nguyen Phillip
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