Wafer dividing method

Details Wafer dividing method Wafer dividing method

2008-02-25

2009-11-17

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

By electromagnetic irradiation

C438S113000, C438S462000, C257S620000, C257SE21596

Reexamination Certificate

active

07618878

ABSTRACT:
A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface, and having test metal patterns which are formed on the streets, comprising the steps of: a laser beam application step for carrying out laser processing to form a dividing start point along a street on both sides of the test metal patterns by applying a laser beam along the street on both sides of the test metal patterns in the street formed on the wafer; and a dividing step for dividing the wafer which has been laser processed to form dividing start points along the dividing start points by exerting external force to the wafer, resulting in leaving the streets having the test metal patterns formed thereon behind.

REFERENCES:
patent: 7088896 (2006-08-01), Andrieu et al.
patent: 7361865 (2008-04-01), Maki et al.
patent: 2002/0177294 (2002-11-01), Otaki
patent: 10-305420 (1998-11-01), None
patent: 3408805 (2003-03-01), None

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