Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2005-07-14
2009-02-10
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S292000
Reexamination Certificate
active
07488997
ABSTRACT:
A solid-state imaging device including a plurality of unit pixels, each of which includes: a storage well for storing electric charge generated by a photoelectric transducer using incident light; a transferring unit, which is formed on a top surface of a substrate, for transferring the electric charge to a floating diffusion region; and an amplifier for outputting a pixel signal that is amplified based on the electric charge transferred to the floating diffusion region, wherein: the transferring unit is a transfer control element having: a transfer gate that is provided on the substrate surface through an insulation film so that part of the transfer gate overlaps the storage well when the substrate is viewed from a direction orthogonal to the substrate surface; and an electric charge-retaining region for retaining the electric charge that is provided within the substrate and under the transfer gate; and further a diffusion layer that serves as a transfer path between the floating diffusion region and the electric charge-retaining region is provided under another diffusion layer of the substrate.
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Harness & Dickey & Pierce P.L.C.
Nguyen Cuong Q
Seiko Epson Corporation
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