Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2006-04-25
2009-02-10
Hendricks, Keith D. (Department: 1794)
Semiconductor device manufacturing: process
Chemical etching
C216S072000
Reexamination Certificate
active
07488685
ABSTRACT:
Methods for patterning integrated circuit (IC) device arrays employing an additional mask process for improving center-to-edge CD uniformity are disclosed. In one embodiment, a repeating pattern of features is formed in a masking layer over a first region of a substrate. Then, a blocking mask is applied over the features in the masking layer. The blocking mask is configured to differentiate array regions of the first region from peripheral regions of the first region. Subsequently, the pattern of features in the array regions is transferred into the substrate. In the embodiment, an etchant can be uniformly introduced to the masking layer because there is no distinction of center/edge in the masking layer. Thus, CD uniformity can be achieved in arrays which are later defined.
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George Patricia A.
Hendricks Keith D.
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
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